| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | DIP-6 |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Forward Voltage | 1.3 V |
| Power Dissipation | 300 mW |
| Isolation Voltage | 7.5 kV |
| Forward Current | 60 mA |
| Output Voltage (Max) | 15 V |
| Input Current (Min) | 60 mA |
| Maximum Forward Voltage (Max) | 1.75 V |
| Forward Current (Max) | 60 mA |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Operating Temperature | -40℃ ~ 100℃ |
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
●Features
●---
● |
● As a remote variable resistor:
● ≤ 100Ω to ≥ 300MΩ
● ≤ 15pF shunt capacitance
● ≥ 100GΩ I/O isolation resistanceAs an analog switch:
● Extremely low offset voltage
● 60 Vpk-pk signal capability
● No charge injection or latch-up
● UL recognized (File #E90700)
ON Semiconductor
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ON Semiconductor
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ON Semiconductor
2 Pages / 0.06 MByte
ON Semiconductor
15 Pages / 0.57 MByte
ON Semiconductor
3 Pages / 0.15 MByte
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