TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | PDIP-6 |
Number of Channels | 1 Channel |
Number of Positions | 6 Position |
Forward Voltage | 1.3 V |
Input Current | 60 mA |
Power Dissipation | 300 mW |
Rise Time | 45 µs |
Isolation Voltage | 7500 VAC |
Input Current (Min) | 60 mA |
Maximum Forward Voltage (Max) | 1.75 V |
Forward Current (Max) | 60 mA |
Fall Time | 45 µs |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bag |
Operating Temperature | -40℃ ~ 100℃ |
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
●Features
●---
● |
● As a remote variable resistor:
● ≤ 100Ω to ≥ 300MΩ
● ≤ 15pF shunt capacitance
● ≥ 100GΩ I/O isolation resistanceAs an analog switch:
● Extremely low offset voltage
● 60 Vpk-pk signal capability
● No charge injection or latch-up
● UL recognized (File #E90700)
ON Semiconductor
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