| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 35.0 A |
| Case/Package | TO-263-3 |
| Power Dissipation | 298 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 298 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT NPT 1.2kV 35A 298W Surface Mount TO-263AB
Fairchild
8 Pages / 0.19 MByte
Fairchild
8 Pages / 0.19 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR HGT1S10N120BNST IGBT Single Transistor, 35A, 2.45V, 298W, 1.2kV, TO-263AB, 3Pins
ON Semiconductor
Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(2+Tab) D2PAK T/R
Fairchild
Trans IGBT Chip N-CH 1.2kV 35A 3Pin(2+Tab) TO-263AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(2+Tab) D2PAK Tube
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