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HGT1S20N60C3S9A
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HGT1S20N60C3S9A Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Case Package:TO-263-3
Description:Trans IGBT Chip N-CH 600V 45A 164000mW 3Pin(2+Tab) D2PAK T/R
Documentation:HGT1S20N60C3S9A Datasheet (8 Pages)Part Numbering System on1 Page
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HGT1S20N60C3S9A Datasheet PDF (8 Pages)
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HGT1S20N60C3S9A Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation164000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)164 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)164000 mW
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HGT1S20N60C3S9A Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃ (TJ)
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HGT1S20N60C3S9A Documents

HGT1S20N60C3S9A Datasheet
ON Semiconductor
8 Pages / 0.13 MByte
HGT1S20N60C3S9A Other Datasheet PDF
ON Semiconductor
18 Pages / 0.94 MByte

HGT1S20N60C3S9 Documents

HGT1S20N60C3S9A Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 600V 45A 164000mW 3Pin(2+Tab) D2PAK T/R
HGT1S20N60C3S9A Datasheet PDF
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IGBT Transistors 45A 600V N-Ch IGBT UFS Series
HGT1S20N60C3S9A Datasheet PDF
Intersil
45A, 600V, N-CHANNEL IGBT, TO-263AB
HGT1S20N60C3S9A Datasheet PDF
Harris
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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