| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 165 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 165 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 165000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
IGBT 600V 40A 165W Through Hole TO-247-3
ON Semiconductor
7 Pages / 0.23 MByte
ON Semiconductor
18 Pages / 2.32 MByte
ON Semiconductor
18 Pages / 3.05 MByte
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Trans IGBT Chip N-CH 600V 40A 165000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 70A 290000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 70A 290000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 165000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 165000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 45A 164000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 40A 165000mW 3Pin(3+Tab) TO-247 Rail
Intersil
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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