| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 30.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 208 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 208 W |
| Rise Time | 45.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 60 ns |
| Input Power (Max) | 208 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 208000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The HGTG30N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
● Short-circuit rating
● 230ns Fall time @ TJ = 150°C
● 208W Total power dissipation @ TC = 25°C
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