Description
●The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
●Features
●• 63A, 600V at TC= +25°C
●• Typical Fall Time - 230ns at TJ= +150°C
●• Short Circuit Rating
●• Low Conduction Loss
●• Hyperfast Anti-Parallel Diode
Harris
8 Pages / 0.26 MByte
Intersil
63A, 600V, UFS Series N-Channel IGBT
Fairchild
Trans IGBT Chip N-CH 600V 63A 208000mW 3Pin(3+Tab) TO-247
Harris
Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
Fairchild
Trans IGBT Chip N-CH 600V 63A 208000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 63A 208000mW 3Pin(3+Tab) TO-247 Tube
Intersil
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Harris
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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