| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 125000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Rail |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 34A 125W Through Hole TO-247-3
ON Semiconductor
4 Pages / 0.09 MByte
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600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Trans IGBT Chip N-CH 600V 34A 3Pin(3+Tab) TO-247 Rail
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Trans IGBT Chip N-CH 600V 34A 125000mW 3Pin(3+Tab) TO-247 Rail
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