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HGTP10N120BN
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HGTP10N120BN Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Case Package:TO-220-3
Description:Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(3+Tab) TO-220AB Tube
Documentation:HGTP10N120BN Datasheet (8 Pages)Part Numbering System on1 Page
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HGTP10N120BN Datasheet PDF (8 Pages)
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HGTP10N120BN Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Power Dissipation298000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)298 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)298000 mW
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HGTP10N120BN Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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HGTP10N120BN Documents

HGTP10N120BN Datasheet
ON Semiconductor
8 Pages / 0.19 MByte
HGTP10N120BN Other Datasheet PDF
ON Semiconductor
10 Pages / 0.28 MByte
HGTP10N120BN Drawing Diagrams
ON Semiconductor
1 Pages / 0.09 MByte

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