TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Dissipation | 70000 mW |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 29 ns |
Input Power (Max) | 70 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 70000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Rail |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 17A 70W Through Hole TO-220-3
ON Semiconductor
9 Pages / 0.13 MByte
ON Semiconductor
1 Pages / 0.09 MByte
Fairchild
Trans IGBT Chip N-CH 600V 17A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
IGBT 600V 17A 70W TO220AB
Intersil
600V, SMPS Series N-Channel IGBT
Fairchild
Trans IGBT Chip N-CH 600V 17A 3Pin(3+Tab) TO-220AB Rail
Intersil
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
ON Semiconductor
Trans IGBT Chip N-CH 600V 17A 70000mW 3Pin(3+Tab) TO-220AB Rail
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