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HGTP7N60B3D
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HGTP7N60B3D Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:IGBTs
Case Package:TO-220-3
Description:Trans IGBT Chip N-CH 600V 14A 60000mW 3Pin(3+Tab) TO-220AB Rail
Documentation:HGTP7N60B3D Datasheet (8 Pages)Part Numbering System on1 Page
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HGTP7N60B3D Datasheet PDF (8 Pages)
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HGTP7N60B3D Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Power Dissipation60000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time37 ns
Input Power (Max)60 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)60000 mW
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HGTP7N60B3D Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingRail
Operating Temperature-55℃ ~ 150℃ (TJ)
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HGTP7N60B3D Documents

HGTP7N60B3D Datasheet
ON Semiconductor
8 Pages / 0.48 MByte
HGTP7N60B3D Drawing Diagrams
ON Semiconductor
1 Pages / 0.09 MByte

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