The HIP2100IBZ is a 100V high frequency half bridge N-channel power MOSFET Driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under-voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.
● Drives N-channel MOSFET half bridge
● Bootstrap supply maximum voltage to 114VDC
● On-chip 1R bootstrap diode
● Fast propagation times for multi-MHz circuits
● Drives 1000pF load with rise and fall times typical 10ns
● CMOS input thresholds for improved noise immunity
● Independent inputs for non-half bridge topologies
● No start-up problems
● Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt
● Low power consumption
● Wide supply range
● Supply under-voltage protection
● 3R Driver output resistance
● Near chip scale package footprint, which improves PCB efficiency and has a thinner profile
