| TYPE | DESCRIPTION |
|---|
| Frequency | 6000 MHz |
| Number of Pins | 10 Pin |
| Supply Voltage (DC) | 28.0V (min) |
| Case/Package | SMD |
| Number of Channels | 1 Channel |
| Power Dissipation | 60500 mW |
| Gain | 24 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60500 mW |
| Supply Voltage (Max) | 32 V |
| Supply Voltage (Min) | 28 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
Product Details
●The HMC1086F10 is a 25W Gallium Nitride (GaN) MMI C Power Amplifier which operates between 2 and 6 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 23 dB of small signal gain, +44.5 dBm saturated output power, and delivers +46 dBm output IP 3 at +33 dBm output power per tone. The amplifier draws 1100 mA quiescent current from a +28V DC supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use.
●Applications
● Test Instrumentation
● General Communications
● Radar
● EW /ECM
●### Features and Benefits
● High Psat: +44.5 dBm
● Power Gain at Psat: 11 dB
● High Output IP3: +46 dBm
● Small Signal Gain: 23 dB
● Supply Voltage: +28V @ 1100 mA
● 50 Ohm Matched Input/Output
● 10-Lead Flange Package
ADI
RF Amp Single Power Amp 6GHz 32V 10Pin Die Tray
ADI
RF Amp Single Power Amp 6GHz 32V 10Pin Tray
ADI
RF Amp Single Power Amp 6GHz 32V 10Pin Die Tray
ADI
25W GaN MMIC Power Amplifier, 2GHz to 6GHz
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