| TYPE | DESCRIPTION |
|---|
| Frequency | 2GHz ~ 20GHz |
| Number of Pins | 10 Pin |
| Supply Voltage (DC) | 24.0V (min) |
| Case/Package | SMD |
| Number of Channels | 1 Channel |
| Power Dissipation | 33 W |
| Gain | 11 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 33000 mW |
| Supply Voltage (Max) | 32 V |
| Supply Voltage (Min) | 24 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
Product Details
●The HMC1087F10 is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 20 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 11 dB of small signal gain, +39 dBm of saturated output power, and +43.5 dBm output IP3 at +28 dBm output power per tone. The amplifier draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of use.
●Applications
● Test Instrumentation
● General Communications
● Radar
●### Features and Benefits
● High Psat: +38.5 dBm
● Power Gain at Psat: +6.5 dB
● High Output IP3: +43.5 dBm
● Small Signal Gain: 11 dB
● Supply Voltage: +28V @ 850 mA
● 50 Ohm Matched Input/Output
● 10-Lead Flange Package
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