| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 3GHz ~ 4GHz |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 5.00V (max) |
| Case/Package | MSOP-8 |
| Supply Current | 250 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 1.88 W |
| Output Power | 27 dBm |
| Gain | 21 dB |
| Test Frequency | 3.5 GHz |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1880 mW |
| Supply Voltage | 5 V |
| Supply Voltage (Max) | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 3.1 mm |
| Size-Width | 3.1 mm |
| Size-Height | 0.95 mm |
| Operating Temperature | -40℃ ~ 85℃ |
Product Details
●The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.
●Applications
● Wireless Local Loop
●### Features and Benefits
● Gain: 21 dB
● Saturated Power: +30 dBm
● 45% PAE
● Supply Voltage: +5V
● Power Down Capability
● Low External Part Count
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