| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 0Hz ~ 10GHz |
| Number of Pins | 2 Pin |
| Supply Voltage (DC) | 5.00V (max) |
| Case/Package | Die |
| Supply Current | 56 mA |
| Power Dissipation | 339 mW |
| Gain | 15 dB |
| Test Frequency | 10 GHz |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 339 mW |
| Supply Voltage | 5 V |
| Supply Voltage (Max) | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Operating Temperature | -55℃ ~ 85℃ |
Product Details
●The HMC397 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 10 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC397 offers 15 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply.
●The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC397 can easily be integrated into Multi- Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).
●Applications
● Microwave & VSAT Radios
● Test Equipment
● Military EW, ECM, C³I
● Space Telecom
●### Features and Benefits
● Gain: 15 dB
● P1dB Output Power: +15 dBm
● Stable Gain Over Temperature
● 50 Ohm I/O’s
● Small Size: 0.38 x 0.58 x 0.1 mm
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