Product Details
●The HMC408LP3(E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.
●Applications
● 802.11a & HiperLAN WLAN
● UNII & Pt-to-Pt / Multi-Point Radios
● Access Point Radios
●### Features and Benefits
● Gain: 20 dB
● Saturated Power:
●+32.5 dBm @ 27% PAE
● Single Supply Voltage: +5V
● Power Down Capability
● 3x3 mm Leadless SMT Package
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