TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 2.2GHz ~ 2.8GHz |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 2.75V (min) |
Case/Package | MSOP-8 |
Supply Current | 300 mA |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Power Dissipation | 1755 mW |
Output Power | 27 dBm |
Gain | 20 dB |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 1755 mW |
Supply Voltage | 2.75V ~ 5V |
Supply Voltage (Max) | 5 V |
Supply Voltage (Min) | 2.75 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.1 mm |
Size-Width | 3.1 mm |
Size-Height | 0.95 mm |
Operating Temperature | -40℃ ~ 85℃ |
Product Details
●The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.
●Applications
● BLUETOOTH
● MMDS
●### Features and Benefits
● Gain: 20 dB
● Saturated Power: +30 dBm
● 32% PAE
● Supply Voltage: +2.75V to +5V
● Power Down Capability
● Low External Part Count
ADI
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