Product Details
●The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.
●Applications
● 802.11a WLAN
● HiperLAN WLAN
● Access Points
● UNII & ISM Radios
●### Features and Benefits
● Gain: 20 dB
● 34% PAE @ Psat = +26 dBm
● 3.7% EVM @ Pout = +15 dBm
● with 54 Mbps OFDM Signal
● Supply Voltage: +3 V
● Power Down Capability
● Low External Part Count
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