| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 4.9GHz ~ 5.9GHz |
| Number of Pins | 16 Pin |
| Supply Voltage (DC) | 3.00V (max) |
| Case/Package | QFN-16 |
| Supply Current | 285 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 16 Position |
| Power Dissipation | 1105 mW |
| Output Power | 23 dBm |
| Gain | 19 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1105 mW |
| Supply Voltage | 3 V |
| Supply Voltage (Max) | 3 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 3.1 mm |
| Size-Width | 3.1 mm |
| Size-Height | 1 mm |
Product Details
●The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.
●Applications
● 802.11a WLAN
● HiperLAN WLAN
● Access Points
● UNII & ISM Radios
●### Features and Benefits
● Gain: 20 dB
● 34% PAE @ Psat = +26 dBm
● 3.7% EVM @ Pout = +15 dBm
● with 54 Mbps OFDM Signal
● Supply Voltage: +3 V
● Power Down Capability
● Low External Part Count
ADI
4900MHz - 5900MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, LEADLESS, PLASTIC, SMT, 16 PIN
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ANALOG DEVICES HMC415LP3E RF Amplifier IC, 19dB Gain / 6dB Noise, 4.9GHz to 5.9GHz, 3V, QFN-16
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RF Amp Single Power Amp 5.9GHz 5V 16Pin QFN EP T/R
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