| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 2GHz ~ 20GHz |
| Number of Pins | 4 Pin |
| Supply Voltage (DC) | 7.50V (min) |
| Case/Package | Die |
| Supply Current | 290 mA |
| Number of Channels | 1 Channel |
| Power Dissipation | 4640 mW |
| Gain | 14 dB |
| Test Frequency | 2GHz ~ 20GHz |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 4640 mW |
| Supply Voltage | 8 V |
| Supply Voltage (Max) | 8.5 V |
| Supply Voltage (Min) | 7.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Operating Temperature | -55℃ ~ 85℃ |
Product Details
●The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
●Applications
● Telecom Infrastructure
● Microwave Radio & VSAT
● Military & Space
● Test Instrumentation
● Fiber Optics
●### Features and Benefits
● P1dB Output Power: +26 dBm
● Gain: 16 dB
● Output IP3: +30 dBm
● Supply Voltage: +8V @ 290 mA
● 50 Ohm Matched Input/Output
● Die Size: 3.12 x 1.63 x 0.1 mm
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