| TYPE | DESCRIPTION |
|---|
| Frequency | 0Hz ~ 6GHz |
| Number of Pins | 4 Pin |
| Supply Voltage (DC) | 5.00V (min) |
| Case/Package | Micro-X |
| Supply Current | 35 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Power Dissipation | 0.504 W |
| Gain | 10.5 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 504 mW |
| Supply Voltage | 5V ~ 12V |
| Supply Voltage (Max) | 12 V |
| Supply Voltage (Min) | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Cut Tape (CT) |
| Size-Height | 1.65 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The HMC476MP86E is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT Amplifier covers DC to 6GHz. This Micro-P packaged amplifier can be used as a cascadable 50R RF/IF gain stage as well as a LO or PA driver with up to +13dBm output power. The HMC476MP86E offers 20dB of gain with a +25dBm output IP3 at 850MHz while requiring only 35mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over-temperature while requiring a minimal number of external bias components.
● P1dB Output power (+12dBm)
● 20dB Gain
● Output IP3 (+25dBm)
● Cascadable 50R I/Os
● Single supply
●ESD sensitive device, take proper precaution while handling the device.
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