| TYPE | DESCRIPTION |
|---|
| Number of Pins | 6 Pin |
| Power Dissipation | 5000 mW |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 5000 mW |
Product Details
●The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain flatness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifier applications. The HMC559 amplifier I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).
●Applications
● Telecom Infrastructure
● Microwave Radio & VSAT
● Military & Space
● Test Instrumentation
● Fiber Optics
●### Features and Benefits
● P1dB Output Power: +28 dBm
● Gain: 14 dB
● Output IP3: +36 dBm
● Supply Voltage: +10V @ 400 mA
● 50 Ohm Matched Input/Output
● Die Size: 3.12 x 1.50 x 0.1 mm
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