TYPE | DESCRIPTION |
---|
Frequency | 2GHz ~ 18GHz |
Number of Pins | 4 Pin |
Supply Voltage (DC) | 4.50V (min) |
Case/Package | Die |
Supply Current | 64 mA |
Number of Channels | 1 Channel |
Power Dissipation | 1.32 W |
Gain | 14 dB |
Test Frequency | 12GHz ~ 18GHz |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1320 mW |
Supply Voltage | 5 V |
Supply Voltage (Max) | 5.5 V |
Supply Voltage (Min) | 4.5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Operating Temperature | -55℃ ~ 85℃ |
Product Details
●The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers.
●The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).
●Applications
● Radar, EW & ECM
● Microwave Radio
● Test Instrumentation
● Military & Space
● Fiber Optic Systems
●### Features and Benefits
● Ultra Low Phase Noise:
●-160 dBc/Hz @ 10 kHz
● P1dB Output Power: +15 dBm
● Gain: 14 dB
● Output IP3: +27 dBm
● Supply Voltage: +5V @64 mA
● 50 Ohm Matched Input/Output
● Die Size: 2.80 x 1.73 x 0.1 mm
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