| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 1.2GHz ~ 2.2GHz |
| Number of Pins | 16 Pin |
| Case/Package | QFN-16 |
| Supply Current | 118 mA |
| Number of Channels | 1 Channel |
| Power Dissipation | 630 mW |
| Gain | 23 dB |
| Test Frequency | 2.2 GHz |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 630 mW |
| Supply Voltage | 3V ~ 5V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Operating Temperature | -40℃ ~ 85℃ |
Product Details
●The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).
●Applications
● Cellular/3G and LTE/WiMAX/4G
● BTS & Infrastructure
● Repeaters and Femtocells
● Public Safety Radio
●### Features and Benefits
● Noise Figure: 0.75 dB
● Gain: 19 dB
● Output IP3: 36 dBm
● Single Supply: +3V to +5V
● 50 Ohm Matched Input/Output
● 16 Lead 3x3mm QFN Package: 9 mm²
ADI
ANALOG DEVICES HMC618ALP3ETR RF Amplifier IC, 19dB Gain / 0.75dB Noise, 1.2GHz to 2.2GHz, 3V to 5V, QFN-16
ADI
RF Amp Single LNA 2.2GHz 5V 16Pin QFN EP T/R
Hittite
IC MMIC AMP LNA ADJ IDS 16-QFN
Hittite
IC MMIC AMP LNA ADJ IDS 16-QFN
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