| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 14 Pin |
| Case/Package | DIE |
| Number of Channels | 1 Channel |
| Power Dissipation | 9.7 W |
| Gain | 23.5 dB |
| Test Frequency | 37GHz ~ 40GHz |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
Product Details
●The HMC7229 is a four-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier with an integrated temperature compensated on-chip power detector, operating between 33 GHz and 40 GHz. The HMC7229 provides a typical range of 23 dB to 24.5 dB of gain and a range of 30 dBm to 32 dBm of saturated output power (PSAT) with 12% to 22% (typical) power added efficiency (PAE) range across a band of 33 GHz to 40 GHz from a 6 V supply. With an excellent OIP3 with a range of 37 dBm to 39.5 dBm across a band of 33 GHz to 40 GHz, the HMC7229 is ideal for linear applications such as high capacity point to point or point to multipoint radios or very small aperture terminal (VSAT)/satellite communications (SATCOM) applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/output ports are internally matched and dc blocked for easy integration into higher level assemblies.
●Applications
● Point to point radios
● Point to multipoint Radio
● VSAT and SATCOM
●### Features and Benefits
● 32 dBm PSAT with 22% PAE
● P1dB POUT: 31.5 dBm
● High OIP3: 39.5 dBm
● High gain: 24.5 dB
● 50 Ω matched input/output
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