| TYPE | DESCRIPTION |
|---|
| Frequency | 200MHz ~ 22GHz |
| Number of Pins | 2 Pin |
| Case/Package | SMD |
| Supply Current | 350 mA |
| Gain | 14 dB |
| Test Frequency | 22 GHz |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Supply Voltage | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Pre-Release |
| Packaging | Tray |
Product Details
●The HMC907A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, 41 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.7 dB from DC to 12 GHz making the HMC907A ideal for EW, ECM, Radar and test equipment applications. The HMC907A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.
●Applications
● Test Instrumentation
● Military & Space
●### Features and Benefits
● High P1dB Output Power: +28 dBm
● High Gain: 14 dB
● High Output IP3: +41 dBm
● Single Supply: +10V @ 350 mA
● 50 Ohm Matched Input/Output
● Die Size: 2.92 x 1.35 x 0.1 mm
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