| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-163 |
The HN1D02F is composed of two (2) cAthode common units. TOSHIBA Diode Silicon EpitAxiAl PlAnAr Type UltrA-High-Speed Switching ApplicAtions Low forwArd VoltAge : VF (3) = 0.90 V (typ.) FAst reVerse recoVery time : trr = 1.6 ns (typ.) SmAll totAl cApAcitAnce : CT = 0.9 pF (typ.)
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2 Pages / 0.23 MByte
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3 Pages / 0.19 MByte
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2 Pages / 0.11 MByte
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Diode Switching 85V 0.1A 6Pin SM T/R
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Diode Switching 85V 0.1A 6Pin US
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DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
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Diode Switching 85V 0.1A 6Pin US Embossed T/R
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Diode Switching 85V 0.1A 6Pin US T/R
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Diode Array Gp 80V 100mA Us6
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DIODE ARRAY GP 80V 100mA ES6
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