| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-153 |
| Polarity | NPN+PNP |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 1.2A/1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Features • TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) • Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max): NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 45 ns (typ.): NPN tf= 50 ns (typ.) • MOS Gate Drive Applications ，Switching Applications
Toshiba
6 Pages / 0.21 MByte
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