| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0065 Ω |
| Power Dissipation | 285 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Rise Time | 125 ns |
| Input Capacitance (Ciss) | 3200pF @25V(Vds) |
| Input Power (Max) | 285 W |
| Fall Time | 57 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 285 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Material | Silicon |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in portable and battery-operated products.
● Peak current vs pulse width curve
● UIS rating curve
● ±20V Gate-source voltage
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