TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 80.0 V |
Current Rating | 75.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 10 mΩ |
Polarity | N-Channel |
Power Dissipation | 270 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 80 V |
Breakdown Voltage (Drain to Source) | 80.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 75.0 A |
Rise Time | 125 ns |
Input Capacitance (Ciss) | 3750pF @25V(Vds) |
Input Power (Max) | 270 W |
Fall Time | 90 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 270W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.7 mm |
Size-Height | 16.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The HUF75545P3 is an UltraFET N-channel Power MOSFET with ultra-low ON-resistance.
● Peak current vs. pulse width curve
● UIS rating curve
● Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
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