| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 56.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2.00 nF |
| Gate Charge | 57.0 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 56.0 A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 2000pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The HUF75639P3 is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products.
● Peak current vs. pulse width curve
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