IGB10N60TATMA1 Datasheet PDF - Infineon

The IGB10N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of Trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

● Lowest Vce (sat) drop for lower conduction losses

● Low switching losses

● Easy parallel switching capability due to positive temperature coefficient in Vce (sat)

● Very soft and fast recovery anti-parallel emitter controlled diode

● High ruggedness, temperature stable behaviour

● Low EMI emissions

● Low gate charge

● Very tight parameter distribution

● Highest efficiency - Low conduction and switching losses

● High device reliability

● 5µs Short-circuit withstand time

● Green product

● Halogen-free