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IGB20N60H3ATMA1
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IGB20N60H3ATMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:TO-263-3
Description:Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
Documentation:IGB20N60H3ATMA1 Datasheet (14 Pages)IGB20N60H3ATMA1 User Reference Manual Guide (270 Pages)IGB20N60H3ATMA1 Application Note (48 Pages)
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IGB20N60H3ATMA1 Datasheet PDF (14 Pages)
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IGB20N60H3ATMA1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Number of Positions3 Position
Power Dissipation170 W
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)170 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)170000 mW
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IGB20N60H3ATMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-40℃ ~ 175℃ (TJ)
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IGB20N60H3ATMA1 Documents

IGB20N60H3ATMA1 Datasheet
Infineon
14 Pages / 1.59 MByte
IGB20N60H3ATMA1 User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IGB20N60H3ATMA1 Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
IGB20N60H3ATMA1 Application Note
Infineon
48 Pages / 2 MByte

IGB20N60H3 Documents

IGB20N60H3 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 40A 3Pin TO-263 T/R
IGB20N60H3ATMA1 Datasheet PDF
Infineon
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
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