IGP20N65H5 Datasheet PDF - Infineon

Summary of Features:

● 650V breakthrough voltage

● Compared to Infineon’s Best-in-class HighSpeed 3 family

● Factor 2.5 lower Q g

● Factor 2 reduction in switching losses

● 200mV reduction in V CE(sat)

● Low C OES/E OSS

● Mild positive temperature coefficient V CE(sat)

● Temperature stability of V f

●Benefits:

● Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability

● 50V increase in the bus voltage possible without compromising reliability

● Higher power density design

●Target Applications:

● Uninterruptible Power Supplies

● Welding