| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-251 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Summary of Features:
● Lowest V ce(sat) drop for lower conduction losses
● Low switching losses
● Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
● Very soft, fast recovery anti-parallel Emitter Controlled Diode
● High ruggedness, temperature stable behavior
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
●Benefits:
● Highest efficiency – low conduction and switching losses
● Comprehensive portfolio in 600V and 1200V for flexibility of design
● High device reliability
Infineon
48 Pages / 7.29 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte
Infineon
Trans IGBT Chip N-CH 600V 8A 42000mW 3Pin(3+Tab) TO-251 Tube
Infineon
IGBT Transistors IGBT PRODUCTS TrenchStop
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