| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 357 W |
| Power Dissipation (Max) | 357 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
IGBT Trench Field Stop 1200V 30A 357W Through Hole PG-TO247-3
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Trans IGBT Chip N-CH 1200V 30A 254000mW 3Pin(3+Tab) TO-247 Tube
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Trans IGBT Chip N-CH 1200V 30A 156000mW 3Pin(3+Tab) TO-247 Tube
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Trans IGBT Chip N-CH 1200V 30A 156000mW 3Pin(3+Tab) TO-247
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Reverse Conducting IGBT with monolithic body diode
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Trans IGBT Chip N-CH 1.2kV 30A 3Pin(3+Tab) TO-247
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Trans IGBT Chip N-CH 1.2kV 30A 3Pin(3+Tab) TO-247
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