| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 254 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 254 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 254000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IHW15N120R3 is a 1200V Reverse Conducting IGBT with monolithic body diode. Powerful monolithic body diode with low forward voltage is designed for soft commutation only. TRENCHSTOP™ technology applications offers very tight parameter distribution and high ruggedness as well easy parallel switching capability due to positive temperature coefficient in VCE (sat). Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
● Excellent quality
● Lower EMI filtering requirements
● JESD-022 Qualified
● Lowest power dissipation
● Better thermal management
● Surge current capability
● Highest reliability against peak currents
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