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IHW30N100R
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IHW30N100R Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1000V 60A 412000mW 3Pin(3+Tab) TO-247 Tube
Documentation:IHW30N100R User Reference Manual Guide (3 Pages)
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IHW30N100R Datasheet PDF (3 Pages)
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IHW30N100R Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Breakdown Voltage (Collector to Emitter)1000 V
Input Power (Max)412 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)412 W

IHW30N100R Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Operating Temperature-40℃ ~ 175℃ (TJ)

IHW30N100R Documents

IHW30N100R User Reference Manual Guide
Infineon
3 Pages / 0.36 MByte
IHW30N100R Other Datasheet PDF
Infineon
12 Pages / 0.31 MByte

IHW30N100 Documents

IHW30N100R Datasheet PDF
Infineon
Trans IGBT Chip N-CH 1000V 60A 412000mW 3Pin(3+Tab) TO-247 Tube
IHW30N100T Datasheet PDF
Infineon
Insulated Gate Bipolar Transistor, 30A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3Pin
IHW30N100TFKSA1 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 1000V 60A 412000mW 3Pin(3+Tab) TO-247 Tube
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