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IHW30N100T
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IHW30N100T Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:TO-247-3
Description:Insulated Gate Bipolar Transistor, 30A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3Pin
Documentation:IHW30N100T Datasheet (12 Pages)
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IHW30N100T Datasheet PDF (12 Pages)
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IHW30N100T Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation412 W
Breakdown Voltage (Collector to Emitter)1000 V
Input Power (Max)412 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)40 ℃
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IHW30N100T Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length15.9 mm
Size-Width5.3 mm
Size-Height20.95 mm
Operating Temperature-40℃ ~ 175℃
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IHW30N100T Documents

IHW30N100T Datasheet
Infineon
12 Pages / 0.3 MByte

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