| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 282 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 95 ns |
| Input Power (Max) | 282 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 282000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
Description:
●Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well.
●Summary of Features:
● Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation
● 650V blocking voltage
● Hard switching capable
●Benefits:
● Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability
● 50V higher voltage possible for increased reliability
● Performs well in designs with higher switching frequencies up to 40kHz
Infineon
15 Pages / 2.07 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte
Infineon
Trans IGBT Chip N-CH 650V 80A 3Pin TO-247 Tube
Infineon
Trans IGBT Chip N-CH 650V 80A 282000mW 3Pin(3+Tab) TO-247 Tube
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