| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Dissipation | 110 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 115 ns |
| Input Power (Max) | 110 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 110000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.31 mm |
| Size-Width | 9.45 mm |
| Size-Height | 4.57 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
Summary of Features:
● Lowest V ce(sat) drop for lower conduction losses
● Low switching losses
● Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
● Very soft, fast recovery anti-parallel Emitter Controlled Diode
● High ruggedness, temperature stable behavior
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
●Benefits:
● Highest efficiency – low conduction and switching losses
● Comprehensive portfolio in 600V and 1200V for flexibility of design
● High device reliability
Infineon
13 Pages / 0.62 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte
Infineon
INFINEON IKB10N60T IGBT Single Transistor, 10A, 2.05V, 110W, 600V, TO-263, 3Pins
Infineon
Trans IGBT Chip N-CH 600V 20A 3Pin(2+Tab) TO-263
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
