| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Dissipation | 75 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 43 ns |
| Input Power (Max) | 75 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
IGBT Trench 600V 8A 75W Surface Mount PG-TO252-3
Infineon
16 Pages / 2.34 MByte
Infineon
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3Pin(2+Tab) DPAK T/R
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