| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 115 ns |
| Input Power (Max) | 110 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 110000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.57 mm |
| Size-Height | 15.95 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IKP10N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
● Lowest Vce (sat) drop for lower conduction losses
● Low switching losses
● Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
● High ruggedness, temperature stable behaviour
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
● Highest efficiency
● Low conduction and switching losses
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