| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 349 W |
| Number of Positions | 3 Position |
| Forward Voltage | 1.65 V |
| Power Dissipation | 349 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 195 ns |
| Input Power (Max) | 349 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 349 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
Summary of Features:
● Lowest V ce(sat) drop for lower conduction losses
● Low switching losses
● Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
● Very soft, fast recovery anti-parallel Emitter Controlled HE diode
● High ruggedness, temperature stable behavior
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
●Benefits:
● Highest efficiency – low conduction and switching losses
● Comprehensive portfolio in 600V and 1200V for flexibility of design
● High device reliability
Infineon
15 Pages / 0.5 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte
Infineon
Trans IGBT Chip N-CH 1200V 50A 349000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 1200V 50A 326000mW 3Pin(3+Tab) TO-247 Tube
Infineon
IGBT Single Transistor, 25A, 2.4V, 326W, 1.2kV, TO-247, 3Pins
Infineon
IGBT Single Transistor, 25A, 2.2V, 349W, 1.2kV, TO-247, 3Pins
Infineon
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) TO-247
Infineon
IGBT, 50A, 1200V, N-CHANNEL
Infineon
IGBT 1200V 50A 349W TO247-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
