TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 187 W |
Number of Positions | 3 Position |
Power Dissipation | 187 W |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 38 ns |
Input Power (Max) | 187 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 187 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.87 mm |
Size-Width | 5.31 mm |
Size-Height | 20.7 mm |
Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
● Low switching losses for high efficiency
● Fast switching behaviour with low EMI emissions
● Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
● Short circuit capability
● Excellent performance
● Low switching and conduction losses
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