| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 246 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 87 ns |
| Input Power (Max) | 246 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 306000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
Description:
●The new 600V TRENCHSTOP™ Performance has been developed based on 600V TRENCHSTOP™ IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
●Summary of Features:
● Lower total switching losses (E ts) i.e. better efficiency IGBT
● 7% lower E ts for switching speed of 8kHz
● 11% lower E ts for switching speed of 15kHz
● Low speed dV/dt switching (<5V/ns)
● Low EMI
● Improved cell design for higher reliability
Infineon
16 Pages / 1.5 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
29 Pages / 1.73 MByte
Infineon
Trans IGBT Chip N-CH 600V 80A 306000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 306000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 306000mW 3Pin(3+Tab) TO-247 Tube
Infineon
The new 600V TRENCHSTOP™ Performance has been developed based on 600V TRENCHSTOP™ IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
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