TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 6 Pin |
Case/Package | DIP-6 |
Output Voltage | 800 V |
Output Current | 0.3 A |
Number of Channels | 1 Channel |
Number of Positions | 6 Position |
Forward Voltage | 1.16 V |
Input Current | 10.0 mA |
Power Dissipation | 500 mW |
Isolation Voltage | 5300 Vrms |
Holding Current | 500 µA |
Forward Current | 60 mA |
Input Voltage (Max) | 1.35 V |
Output Voltage (Max) | 560 VAC |
Input Current (Min) | 60 mA |
Maximum Forward Voltage (Max) | 1.35 V |
Forward Current (Max) | 60 mA |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 8.7 mm |
Size-Width | 6.5 mm |
Size-Height | 3.81 mm |
Operating Temperature | -55℃ ~ 100℃ |
The IL4108 is a 6-pin Phototriac Output Optocoupler consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2mA (DC). The use of a proprietary dV/dt clamp results in a static dV/dt of greater than 10kV/ms. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver. The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET.
● High input sensitivity
● Low input current
● 300mA On-state current
● <10µA Very low leakage
● 6V Reverse voltage
Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
1 Pages / 0.17 MByte
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