TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 16 Pin |
Voltage Rating (DC) | 1.15 V |
Case/Package | DIP-16 |
Rise/Fall Time | 2 µs |
Output Voltage | 70.0 V |
Number of Channels | 4 Channel |
Number of Positions | 16 Position |
Forward Voltage | 1.15 V |
Input Current | 10 mA |
Power Dissipation | 500 mW |
Rise Time | 2.8 µs |
Isolation Voltage | 5.3 kV |
Forward Current | 60 mA |
Output Voltage (Max) | 70 V |
Input Current (Min) | 60 mA |
Maximum Forward Voltage (Max) | 1.3 V |
Forward Current (Max) | 60 mA |
Fall Time | 11 µs |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Length | 20.07 mm |
Size-Width | 6.81 mm |
Size-Height | 3.81 mm |
Operating Temperature | -55℃ ~ 100℃ |
The ILQ621GB is a 4-channel 16-pin Phototransistor Output Optocoupler uses GaAs IRLED emitters and high gain NPN silicon phototransistors. This device is constructed using double moulded insulation technology. This assembly process offers a withstand test voltage of 7500VDC. The ILQ621GB is well suited for CMOS interfacing given the CTRCEsat of 30% minimum at IF of 1mA. High gain linear operation is guaranteed by a minimum CTRCE of 100% at 5mA. It has a guaranteed CTRCE 50% minimum at 5mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.
● 70V High collector emitter voltage
● 6V Reverse voltage
● 1.5A Surge current
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