| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 180 MHz |
| Number of Pins | 6 Pin |
| Current Rating | 150 mA |
| Case/Package | SOT-457 |
| Power Rating | 0.3 W |
| Number of Positions | 6 Position |
| Polarity | NPN, PNP |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 0.15A |
| hFE Min | 120 @1mA, 6V |
| hFE Max | 560 |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.6 mm |
| Size-Height | 1.2 mm |
| Operating Temperature | 150℃ (TJ) |
The IMZ1AT108 is a NPN-PNP general purpose Bipolar Transistor Array with epitaxial planar silicon structure. It has mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
● Transistor elements are independent, eliminating interference
● Mounting area can be cut in half
● Ultra-compact complex digital transistor
● Potential divider type
● Small surface-mount package
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